Toshiba ships SiC MOSFET samples
Analysis based on 6 articles · First reported May 21, 2026 · Last updated May 28, 2026
The launch of Toshiba's new SiC MOSFET, TW007D120E, is expected to positively impact the semiconductor market by offering more efficient power solutions for AI data centers and renewable energy. This could lead to increased demand for Toshiba's products and potentially influence the stock prices of companies in the data center and renewable energy sectors that adopt this technology.
Toshiba Electronic Devices & Storage Corporation has begun shipping test samples of its new 1200V trench-gate SiC MOSFET, the TW007D120E. This advanced semiconductor device is primarily designed for power supply systems in next-generation AI data centers, addressing the increasing power consumption and demand for higher power conversion efficiency. The TW007D120E features Toshiba's proprietary trench-gate structure, which significantly reduces On-resistance and improves the figure of merit (On-resistance × gate-drain charge) compared to previous generations. It is housed in a QDPAK package supporting top-side cooling, enhancing power density and thermal performance. The product is also suitable for renewable energy applications like photovoltaic inverters and EV charging stations. Toshiba plans for mass production in fiscal year 2026 and intends to expand its lineup, including automotive applications. The development was supported by a project subsidized by the Japan — New Energy and Industrial Technology Development Organization.
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