Navitas launches UHV-TO-247-4-ISO package

Navitas Semiconductor has launched its new UHV-TO-247-4-ISO package, a high-performance discrete power device designed for 1200 V to 3300 V GeneSiC Silicon carbide MOSFETs. This package integrates an Aluminium nitride substrate for over 6000 V isolation and features a direct-cooled, reflow-compatible thermal pad, eliminating the need for external isolation materials and thermal interface materials (TIM). These advancements significantly improve power density, reliability, and efficiency, while reducing electromagnetic coupling and EMI management costs. The UHV-TO-247-4-ISO package expands Navitas Semiconductor's portfolio and is aimed at enhancing power systems in AI data centers, energy, and grid infrastructure. Paul Wheeler, VP & GM of the SiC Business Unit at Navitas Semiconductor, highlighted the package's ability to overcome critical thermal and isolation challenges. The product will be showcased at Europe 2026 in Germany — Nuremberg.